symbol parameters rating units absolute maximum ratings: v ceo collector-emitter voltage 28 v v ebo emitter-base voltage 3.5 v i c collector current (instantaneous) 320 ma t j junction temperature 200 o c t stg storage temperature -65 to 200 o c v cbo collector-base voltage 50 v symbol parameters & conditions unit min. typ. max. v ce =28v, i c = 320 ma, class c c ob output capacitance: f = 1 mhz, i e = 0 pf 4.5 bipolarics, inc part number BMT1417B02 silicon microwave power transistor product data sheet jc thermal resistance 6.5 c/w features: common base, class c package configuration high output power 2 w @ 1.4 to 1.7 ghz high gain bandwidth product f t = 6.0 ghz @ i c = 320 ma high gain g pe = 7.0 db to 8.2 db high reliability gold metallization nitride passivation diffused ballast resistors beo packaging performance data: electrical characteristics (t a = 25 o c) p 1db power output at 1 db compression: f = 1.4 ghz w 2 collector efficiency class c % 50 h fe forward current transfer ratio: v cb = 5v, i c = 100 ma 10 60 100 p t total power dissipation w 4 ? built-in matching network for broadband operation
bipolarics, inc. part number BMT1417B02 page 2 silicon microwave power transistor
bipolarics, inc. part number BMT1417B02 page 3 silicon microwave power transistor
bipolarics, inc. part number BMT1417B02 page 4 silicon microwave power transistor
bipolarics, inc. part number BMT1417B02 page 5 silicon microwave power transistor notes : (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice bipolarics, inc. 602 charcot ave. san jose, ca 94538 phone: (408) 456-0430 fax: (408 ) 456-0431 (mm) lead 1 2 3 4 25 package emitter base collector base 25 package: 0.250" 2 lead flange
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